US 12,482,783 B2
Semiconductor package including bonding wire coated with oxide insulation, electronic system including same, and battery module including same
Soo Jae Park, Seoul (KR)
Appl. No. 18/274,369
Filed by Soo Jae Park, Seoul (KR)
PCT Filed Jan. 7, 2022, PCT No. PCT/KR2022/000317
§ 371(c)(1), (2) Date Jul. 26, 2023,
PCT Pub. No. WO2022/164073, PCT Pub. Date Aug. 4, 2022.
Claims priority of application No. 10-2021-0014291 (KR), filed on Feb. 1, 2021.
Prior Publication US 2024/0088088 A1, Mar. 14, 2024
Int. Cl. H01L 23/00 (2006.01); H01L 21/02 (2006.01); H01L 25/065 (2023.01)
CPC H01L 24/45 (2013.01) [H01L 21/02186 (2013.01); H01L 21/0228 (2013.01); H01L 24/05 (2013.01); H01L 25/0655 (2013.01); H01L 2224/05023 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/4502 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1435 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A semiconductor package comprising:
a substrate;
a semiconductor chip mounted on the substrate;
a bonding wire electrically connecting the substrate and the semiconductor chip, the bonding wire comprising:
a metal core disposed therein; and
an oxide insulation coating covering the metal core; and
first fragments located in a first portion where the substrate and the bonding wire are connected, the first fragments being formed of the same material as the oxide insulation coating of the bonding wire,
wherein the first fragments comprise fragments of the oxide insulation coating fragmented by pressure from a liquid metal from the metal core heated by heating the bonding wire while the bonding wire is bonded,
wherein the bonding wire is connected to the substrate in the first portion while a bonding portion including the liquid metal and the first fragments is formed by heating an end of the bonding wire with the oxide insulation coating covering the metal core to the end in a longitudinal direction of the metal core.