US 12,482,776 B2
Metal pads over TSV
Guilian Gao, San Jose, CA (US); Bongsub Lee, Santa Clara, CA (US); Gaius Gillman Fountain, Jr., Youngsville, NC (US); Cyprian Emeka Uzoh, San Jose, CA (US); Laura Wills Mirkarimi, Sunol, CA (US); Belgacem Haba, Saratoga, CA (US); and Rajesh Katkar, Milpitas, CA (US)
Assigned to Adeia Semiconductor Bonding Technologies Inc., San Jose, CA (US)
Filed by ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC., San Jose, CA (US)
Filed on Feb. 20, 2024, as Appl. No. 18/582,312.
Application 18/582,312 is a continuation of application No. 17/836,840, filed on Jun. 9, 2022, granted, now 11,955,445.
Application 17/836,840 is a continuation of application No. 16/439,622, filed on Jun. 12, 2019, granted, now 11,393,779, issued on Jul. 19, 2022.
Claims priority of provisional application 62/846,081, filed on May 10, 2019.
Claims priority of provisional application 62/684,505, filed on Jun. 13, 2018.
Prior Publication US 2024/0194625 A1, Jun. 13, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/00 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01)
CPC H01L 24/08 (2013.01) [H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/09 (2013.01); H01L 24/80 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 24/94 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05181 (2013.01); H01L 2224/05184 (2013.01); H01L 2224/08146 (2013.01); H01L 2224/80896 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A method of forming a microelectronic assembly, comprising:
providing a first through substrate via (TSV) in a first substrate having a first surface;
forming a first metal contact pad in the first surface electrically coupled to and aligned over the first TSV;
forming a second metal contact pad in the first surface, the second metal contact pad having no TSV aligned thereunder, wherein the second metal contact pad has a different structure from the first metal contact pad to allow greater expansion of the TSV and first metal contact pad relative to the second metal contact pad; and
treating the first surface, the first metal contact pad and the second metal contact pad to form a first bonding surface for direct hybrid bonding.