US 12,482,772 B2
Bonding structure of dies with dangling bonds
Hsien-Wei Chen, Hsinchu (TW); Ming-Fa Chen, Taichung (TW); and Chih-Chia Hu, Taipei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jan. 12, 2024, as Appl. No. 18/411,674.
Application 17/113,357 is a division of application No. 16/371,863, filed on Apr. 1, 2019, granted, now 10,861,808, issued on Dec. 8, 2020.
Application 18/411,674 is a continuation of application No. 17/113,357, filed on Dec. 7, 2020, granted, now 11,908,817.
Claims priority of provisional application 62/770,396, filed on Nov. 21, 2018.
Prior Publication US 2024/0153899 A1, May 9, 2024
Int. Cl. H01L 25/16 (2023.01); H01L 23/00 (2006.01); H01L 23/495 (2006.01); H01L 23/498 (2006.01); H03K 19/1776 (2020.01)
CPC H01L 24/06 (2013.01) [H01L 23/49503 (2013.01); H01L 23/49827 (2013.01); H03K 19/1776 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A structure comprising:
a first die comprising:
a first semiconductor substrate;
a through-via penetrating through the first semiconductor substrate; and
a first dielectric layer over and contacting the first semiconductor substrate;
a second dielectric layer over the first die;
a first active bond pad in the second dielectric layer, wherein the first active bond pad is over and electrically coupling to the through-via;
a first dummy bond pad in the second dielectric layer;
a second die comprising:
a second active bond pad over and joined to the first active bond pad;
a dummy die; and
an encapsulant encapsulating the dummy die and the second die therein, wherein the first dummy bond pad comprises a top surface contacting one of the dummy die and the encapsulant.