US 12,482,768 B2
Semiconductor structure having protective layer on sidewall of conductive member and manufacturing method thereof
Hsih-Yang Chiu, Taoyuan (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Dec. 8, 2022, as Appl. No. 18/077,375.
Prior Publication US 2024/0194621 A1, Jun. 13, 2024
Int. Cl. H01L 23/00 (2006.01)
CPC H01L 24/02 (2013.01) [H01L 24/05 (2013.01); H01L 2224/02311 (2013.01); H01L 2224/02331 (2013.01); H01L 2224/02375 (2013.01); H01L 2224/02381 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05008 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/01028 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01079 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a substrate; and
a conductive member disposed over the substrate,
wherein the conductive member includes a seed layer disposed over the substrate, a core disposed over the seed layer, and a protective layer disposed on a top surface of the core and surrounding a sidewall of the core;
wherein the protective layer has a first portion disposed over the core and a second portion surrounding the core;
wherein a thickness of the first portion of the protective layer is equal to a thickness of the second portion of the protective layer;
wherein a width of the core is greater than a width of the seed layer, such that the seed layer is contactless with the protective layer.