| CPC H01L 23/642 (2013.01) [H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 25/105 (2013.01); H10D 1/692 (2025.01); H10D 84/01 (2025.01); H01L 23/49816 (2013.01); H01L 23/49822 (2013.01); H01L 23/49833 (2013.01); H01L 23/49838 (2013.01); H01L 25/0657 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16238 (2013.01); H01L 2224/32227 (2013.01); H01L 2224/32238 (2013.01); H01L 2224/73204 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06524 (2013.01)] | 19 Claims |

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1. A semiconductor die comprising:
semiconductor devices located on a semiconductor substrate; and
metal-insulator-metal corner structures overlying the semiconductor devices and located in corner regions of the semiconductor die, wherein;
each of the metal-insulator-metal corner structures comprises a bottom corner plate, a dielectric corner plate overlying the bottom corner plate, and a top corner plate overlying the dielectric corner plate; and
each of the metal-insulator-metal corner structures has a horizontal cross-sectional shape selected from a triangular shape and a non-triangular polygonal shape, wherein the non-triangular polygonal shape includes a connecting shape and two laterally-extending strips, and the two laterally-extending strips extend along two horizontal directions that are perpendicular to each other and the two laterally-extending strips are connected to each other by the connecting shape.
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