| CPC H01L 23/5389 (2013.01) [H01L 23/3128 (2013.01); H01L 23/49816 (2013.01); H01L 23/49827 (2013.01); H01L 24/16 (2013.01); H01L 25/0655 (2013.01); H01L 2224/12105 (2013.01); H01L 2924/15311 (2013.01)] | 5 Claims |

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1. A method for preparing a plurality of water-level ASIC 3D integrated substrates, comprising:
providing a carrier;
forming a separation layer on the carrier;
forming a first wiring layer on the separation layer, wherein the first wiring layer comprises a first dielectric layer and a first metal wire layer, wherein the first metal wire layer is exposed from a top surface of the first dielectric layer;
forming a conductive pillar on the first wiring layer, wherein the conductive pillar is electrically connected to the first metal wire layer;
forming a molding layer, wherein the molding layer molds the conductive pillar, and wherein the conductive pillar is exposed from a top surface of the molding layer;
forming a second wiring layer on the molding layer, wherein the second wiring layer comprises a second dielectric layer and a second metal wire layer, wherein the second metal wire layer is exposed from a top surface of the second dielectric layer, and wherein the second metal wire layer is electrically connected to the conductive pillar;
forming solder balls on the second wiring layer, wherein the solder balls are electrically connected to the second metal wire layer; and
peeling off the carrier at the separation layer to expose a surface of the first wiring layer away from the conductive pillar.
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