US 12,482,748 B2
Method of manufacturing semiconductor structure including nitrogen treatment and semiconductor structure thereof
Ying-Cheng Chuang, Taoyuan (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Apr. 11, 2023, as Appl. No. 18/133,061.
Prior Publication US 2024/0347448 A1, Oct. 17, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/528 (2006.01); H01L 21/768 (2006.01)
CPC H01L 23/528 (2013.01) [H01L 21/76802 (2013.01); H01L 21/76819 (2013.01); H01L 21/76877 (2013.01)] 20 Claims
OG exemplary drawing
 
16. A semiconductor structure, comprising:
a substrate, including a plurality of pillars in an array region of the substrate, wherein a top surface of each of the plurality of pillars is a substantially planar surface;
a residual nitrogen, partially disposed on sidewalls of the pillars proximal to the top surfaces of the pillars;
an oxide layer, surrounding each of the pillars;
a plurality of first contacts, extending from the top surfaces of the pillars into the pillars; and
a plurality of second contacts, extending from the top surface of the first dielectric layer into the first dielectric layer.