US 12,482,746 B2
Early backside first power delivery network
Brent Anderson, Jericho, VT (US); Lawrence A. Clevenger, Saratoga Springs, NY (US); Christopher J. Penny, Saratoga Springs, NY (US); and Nicholas Anthony Lanzillo, Wynantskill, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Oct. 22, 2021, as Appl. No. 17/508,113.
Prior Publication US 2023/0128985 A1, Apr. 27, 2023
Int. Cl. H01L 23/528 (2006.01); H10D 86/00 (2025.01); H01L 25/065 (2023.01)
CPC H01L 23/528 (2013.01) [H10D 86/201 (2025.01); H01L 25/0657 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A semiconductor structure comprising:
a substrate;
a first insulating material layer above the substrate;
a plurality of conductive metal wires disposed within said first insulating material layer and forming a power delivery network (PDN) above the substrate of said semiconductor structure;
a plurality of conductive power rail structures disposed above said plurality of conductive metal wires of the PDN and separated therefrom by an etch stop dielectric material layer, the etch stop layer situated on top of the conductive metal wire of said power delivery network and below the conductive power rail structure; and
a conductive via structure electrically connecting a conductive power rail structure to a conductive metal wire of the PDN, said conductive via structure passing through said etch stop dielectric material layer, wherein the conductive via structure electrically connecting a conductive power rail structure is self-aligned to said conductive power rail structure.