US 12,482,705 B2
Conductive feature formation and structure using bottom-up filling deposition
Pin-Wen Chen, Keelung (TW); Chia-Han Lai, Zhubei (TW); Chih-Wei Chang, Hsinchu (TW); Mei-Hui Fu, Hsinchu (TW); Ming-Hsing Tsai, Chu-Pei (TW); Wei-Jung Lin, Hsinchu (TW); Yu-Shih Wang, Tainan (TW); Ya-Yi Cheng, Taichung (TW); and I-Li Chen, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Mar. 8, 2021, as Appl. No. 17/195,211.
Application 16/654,845 is a division of application No. 15/920,727, filed on Mar. 14, 2018, granted, now 10,475,702, issued on Nov. 12, 2019.
Application 17/195,211 is a continuation of application No. 16/654,845, filed on Oct. 16, 2019, granted, now 10,943,823.
Prior Publication US 2021/0193517 A1, Jun. 24, 2021
Int. Cl. H01L 21/768 (2006.01); H01L 21/285 (2006.01); H01L 21/3213 (2006.01); H01L 23/535 (2006.01)
CPC H01L 21/76895 (2013.01) [H01L 21/28556 (2013.01); H01L 21/32134 (2013.01); H01L 21/76883 (2013.01); H01L 23/535 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A structure comprising:
a first dielectric layer over a substrate;
a first conductive feature and a second conductive feature each extending through the first dielectric layer, the first conductive feature and the second conductive feature each comprising a first metal;
a second dielectric layer over the first dielectric layer;
a third conductive feature extending through the second dielectric layer having a first lower convex surface extending into the first conductive feature, wherein the third conductive feature comprises a second metal different from the first metal, wherein the second metal of the third conductive feature extends continuously from a first sidewall of the second dielectric layer to a second sidewall of the second dielectric layer, and wherein the third conductive feature has a first width at a topmost surface of the second dielectric layer;
a fourth conductive feature extending through the second dielectric layer having a second lower convex surface extending into the second conductive feature, wherein the fourth conductive feature comprises the second metal, wherein the second metal of the fourth conductive feature extends continuously from a third sidewall of the second dielectric layer to a fourth sidewall of the second dielectric layer, and wherein the fourth conductive feature has a second width different than the first width at the topmost surface of the second dielectric layer; and
a liner along sidewalls and a bottom surface of the first conductive feature, wherein the third conductive feature touches a first sidewall of the liner below a top surface of the liner.