| CPC H01L 21/76831 (2013.01) [H01L 21/76802 (2013.01); H01L 21/76877 (2013.01)] | 20 Claims |
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1. A semiconductor device, comprising:
an electrically conductive structure including a first electrically conductive feature and a second electrically conductive feature;
a spacer structure configured to space the first electrically conductive feature and the second electrically conductive feature apart from each other, and including
a first dielectric spacer layer contacting lateral surfaces of the first electrically conductive feature and the second electrically conductive feature,
a second dielectric spacer layer conformally covering the first dielectric spacer layer, the first dielectric spacer layer having a thermal conductivity higher than a thermal conductivity of the second dielectric spacer layer, and
a sustaining cap formed on the second dielectric spacer layer and cooperating with the second dielectric spacer layer to define an air gap disposed between the first electrically conductive feature and the second electrically conductive feature; and
an interconnect layer having a conductive interconnect structure connected to one of the first electrically conductive feature and the second electrically conductive feature,
wherein
the first dielectric spacer layer includes graphene oxide, diamond, or a combination thereof,
the second dielectric spacer layer includes aluminum nitride, aluminum oxynitride, aluminum oxide, silicon oxide, silicon oxynitride, silicon oxycarbonitride, or combinations thereof, and
the conductive interconnect structure is in direct contact with the spacer structure.
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