	US 12,482,681 B2
	Semiconductor inspection method including heating a top surface of a semiconductor package
Soonkyu Hwang, Asan-si (KR); Jinyeol Yang, Cheonan-si (KR); Haegu Lee, Anyang-si (KR); Jae-Min Jeon, Asan-si (KR); and Jin Hee Han, Asan-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-Do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Aug. 18, 2022, as Appl. No. 17/890,648.
Claims priority of application No. 10-2021-0182151 (KR), filed on Dec. 17, 2021.
Prior Publication US 2023/0197485 A1, Jun. 22, 2023
Int. Cl. H01L 21/67 (2006.01); G06T 7/00 (2017.01)

CPC H01L 21/67288 (2013.01) [G06T 7/0004 (2013.01); G06T 2207/10048 (2013.01); G06T 2207/30148 (2013.01)]

11 Claims

1. A semiconductor inspection method, comprising:

heating a top surface of a semiconductor package to form a heated semiconductor package;

capturing the top surface of the heated semiconductor package to obtain thermal image data about the top surface of the semiconductor package; and

analyzing the thermal image data,

wherein analyzing the thermal image data includes,

analyzing first thermal image data about the top surface at a first region of the semiconductor package, the first region being provided with a chip, and

analyzing second thermal image data about the top surface at a second region of the semiconductor package, the second region being provided with no chip, and

wherein the analyzing the first thermal image data includes,

obtaining first region data about temperature distribution at the top surface of the first region, and

obtaining thickness data of a cover molding layer about a thickness distribution of a molding layer on the chip in the first region by using the first region data,

wherein the analyzing the second thermal image data includes:

obtaining second region data about a temperature distribution at the top surface of the second region; and

obtaining thickness data of a peripheral molding layer about a thickness distribution of the molding layer in the second region by using the second region data,

the method further comprising,

obtaining 3D shape data about an outward appearance of the semiconductor package by using a three-dimensional (3D) sensing device; and

analyzing the 3D shape data,

wherein the analyzing the 3D shape data includes using the 3D shape data to obtain 3D thickness data about the thickness distribution of the molding layer,

wherein the analyzing the second thermal image data further includes using the 3D thickness data to correct the thickness data of the peripheral molding layer, and

wherein the correcting the thickness data of the peripheral molding layer includes determining the 3D thickness data as a first value when the 3D thickness data is different from the thickness data of the peripheral molding layer obtained by using the second region data.