| CPC H01L 21/67017 (2013.01) [C23C 8/24 (2013.01); C23C 14/50 (2013.01); C23C 16/4401 (2013.01); C23C 16/4412 (2013.01); C23C 16/4583 (2013.01); C23C 16/4586 (2013.01); F15D 1/025 (2013.01); H01J 37/32715 (2013.01); H01J 37/32807 (2013.01); H01J 37/32816 (2013.01); H01J 37/32834 (2013.01); H01L 21/6838 (2013.01)] | 20 Claims |

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1. A gas flow accelerator, comprising:
a cylindrical body portion;
a tapered cylindrical body portion including a first end integrally formed with the cylindrical body portion;
an inlet port connected to the cylindrical body portion and configured to receive a process gas to be removed from a process chamber body of a semiconductor processing tool by a main pumping line,
wherein the semiconductor processing tool includes a chuck provided within the process chamber body and a chuck vacuum line connected to the chuck and configured to apply a vacuum to the chuck to retain a semiconductor device against the chuck,
wherein the tapered cylindrical body portion is configured to prevent buildup of processing byproduct on interior walls of the main pumping line;
an outlet port integrally formed with a second end of the tapered cylindrical body portion; and
a pressure relief port connected to the cylindrical body portion,
wherein a portion of the chuck vacuum line is provided through the pressure relief port and the outlet port.
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