US 12,482,662 B2
Systems and methods for producing epitaxial wafers
Chih-Yuan Hsu, Hsinchu (TW); Chun-Chin Tu, Zhubei (TW); Yau-Ching Yang, Hsinchu County (TW); and Shih-Chiang Chen, Hsinchu (TW)
Assigned to GlobalWafers Co., Ltd., Hsinchu (TW)
Filed by GlobalWafers Co., Ltd., Hsinchu (TW)
Filed on Feb. 13, 2023, as Appl. No. 18/168,199.
Claims priority of provisional application 63/268,287, filed on Feb. 21, 2022.
Prior Publication US 2023/0268186 A1, Aug. 24, 2023
Int. Cl. H01L 21/304 (2006.01); B24B 37/04 (2012.01); H01L 21/02 (2006.01); H01L 21/66 (2006.01)
CPC H01L 21/304 (2013.01) [B24B 37/042 (2013.01); H01L 21/02532 (2013.01); H01L 22/20 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of producing an epitaxial semiconductor wafer, the method comprising:
a) measuring, by at least one measuring device in communication with a controller, one or more first semiconductor wafers having epitaxial layers deposited thereon to determine an epitaxial deposition layer profile produced by an epitaxy apparatus;
b) polishing a second semiconductor wafer, before epitaxial layers are deposited on the second semiconductor wafer, using a polishing assembly in communication with the controller, wherein the controller controls polishing of the second semiconductor wafer according to one or more process conditions;
c) measuring, by the at least one measuring device, the polished second semiconductor wafer to determine a surface profile of the polished second semiconductor wafer;
d) generating a predicted post-epitaxy surface profile of the polished second semiconductor wafer by comparing the determined surface profile of the polished second semiconductor wafer and the determined epitaxial deposition layer profile produced by the epitaxy apparatus;
e) determining a predicted post-epitaxy parameter based on the predicted post-epitaxy surface profile;
f) determining, by the controller and based on the predicted post-epitaxy parameter, one or more adjustments to the process conditions of the polishing assembly; and
g) adjusting, by the controller and based on the determined one or more adjustments to the process conditions, one or more process conditions of the polishing assembly.