| CPC H01L 21/3003 (2013.01) | 20 Claims |
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1. A method of manufacturing a semiconductor device, the method comprising:
preparing a substrate including cell regions and a scribe lane region;
forming circuit blocks in the cell regions of the substrate, the substrate including a first surface and a second surface;
forming a bias pad on the first surface of the substrate, such that the bias pad is in the scribe lane region of the substrate;
bonding a deuterium exchange structure to the second surface of the substrate;
implanting deuterium into the deuterium exchange structure using plasma processing; and
applying a first voltage to the bias pad, such that the deuterium is diffused from the deuterium exchange structure into the substrate through the second surface of the substrate.
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