US 12,482,652 B2
Method for forming integrated circuit structures
Bhargav Sridhar Citla, Fremont, CA (US); Joshua Alan Rubnitz, Monte Sereno, CA (US); Jethro Tannos, San Jose, CA (US); Srinivas D. Nemani, Saratoga, CA (US); Kartik Ramaswamy, San Jose, CA (US); and Yang Yang, Cupertino, CA (US)
Assigned to Applied Materials Inc., Santa Clara, CA (US)
Appl. No. 17/624,174
Filed by APPLIED MATERIALS, INC., Santa Clara, CA (US)
PCT Filed Jun. 19, 2020, PCT No. PCT/US2020/038718
§ 371(c)(1), (2) Date Dec. 30, 2021,
PCT Pub. No. WO2021/003031, PCT Pub. Date Jan. 7, 2021.
Claims priority of provisional application 62/869,833, filed on Jul. 2, 2019.
Prior Publication US 2022/0351969 A1, Nov. 3, 2022
Int. Cl. H01L 21/02 (2006.01); C23C 16/30 (2006.01); C23C 16/455 (2006.01); C23C 16/505 (2006.01); C23C 16/56 (2006.01); H01J 37/32 (2006.01)
CPC H01L 21/02351 (2013.01) [C23C 16/308 (2013.01); C23C 16/505 (2013.01); C23C 16/56 (2013.01); H01J 37/32357 (2013.01); H01L 21/0214 (2013.01); H01L 21/02274 (2013.01); H01L 21/02329 (2013.01); H01L 21/0234 (2013.01); C23C 16/45557 (2013.01); H01J 37/32449 (2013.01); H01J 2237/3321 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A method for forming an integrated circuit structure, comprising:
delivering a process gas to a process volume of a process chamber;
applying RF power to an electrode formed from a high secondary electron emission coefficient material disposed in the process volume;
generating a plasma comprising ions in the process volume;
bombarding the electrode with the ions to cause the electrode to emit electrons and form an electron beam; and
contacting a dielectric material with the electron beam to cure the dielectric material, wherein the dielectric material is a flowable chemical vapor deposition product, wherein the dielectric material is a silicon oxynitride layer characterized as SiOxNy, wherein x is a number greater than or equal to 1 and less than or equal to 2 and y is a number greater than or equal to 1 and less than or equal to 2, wherein curing the dielectric material reduces x and increases y.