US 12,482,648 B2
Selective passivation and selective deposition
Jan Willem Maes, Wilrijk (BE); Michael Eugene Givens, Helsinki (FI); Suvi P. Haukka, Helsinki (FI); Vamsi Paruchuri, Mesa, AZ (US); Ivo Johannes Raaijmakers, Bilthoven (NL); Shaoren Deng, Ghent (BE); Andrea Illiberi, Leuven (BE); Eva E. Tois, Espoo (FI); Delphine Longrie, Ghent (BE); Charles Dezelah, Helsinki (FI); and Marko Tuominen, Helsinki (FI)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP HOLDING B.V., Almere (NL)
Filed on Jul. 30, 2021, as Appl. No. 17/390,608.
Application 17/390,608 is a continuation in part of application No. 16/588,600, filed on Sep. 30, 2019, granted, now 11,145,506.
Claims priority of provisional application 62/805,471, filed on Feb. 14, 2019.
Claims priority of provisional application 62/740,124, filed on Oct. 2, 2018.
Prior Publication US 2021/0358745 A1, Nov. 18, 2021
Int. Cl. H01L 21/02 (2006.01)
CPC H01L 21/02178 (2013.01) [H01L 21/02118 (2013.01); H01L 21/02205 (2013.01); H01L 21/02271 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A method of selectively depositing a metal oxide on a second surface of a substrate relative to a first surface of the substrate, where the first and second surfaces have different compositions, the method comprising, in order:
selectively forming an organic passivation layer from vapor phase reactants on the first surface relative to the second surface; and
selectively depositing metal oxide comprising aluminum oxide from vapor phase reactants on the second surface relative to the organic passivation layer, wherein the aluminum oxide is deposited using an aluminum precursor comprising one or more of: an aluminum precursor comprising one or more acetate ligands, AlMe(OMe)2, AlMe(OEt)2, AlMe(OiPr)2, AlMe(OtBu)2, AlEt(OMe)2, AlEt(OEt)2, AlEt(OiPr)2, and AlEt(OtBu)2.