| CPC H01J 37/32165 (2013.01) [H01J 37/32128 (2013.01); H01J 37/32146 (2013.01); H01J 37/32183 (2013.01)] | 20 Claims |

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1. A plasma processing system, comprising:
a plasma processing chamber;
a coil disposed next to the plasma processing chamber, the coil having a first end and a second end;
a first direct-drive radiofrequency power supply having an output through which a first shaped-amplified square waveform signal is transmitted;
a first reactive circuit connected between the output of the first direct-drive radiofrequency power supply and the first end of the coil, the first reactive circuit configured to transform the first shaped-amplified square waveform signal into a first shaped-sinusoidal signal in route to the first end of the coil;
a second direct-drive radiofrequency power supply having an output through which a second shaped-amplified square waveform signal is transmitted; and
a second reactive circuit connected between the output of the second direct-drive radiofrequency power supply and the second end of the coil, the second reactive circuit configured to transform the second shaped-amplified square waveform signal into a second shaped-sinusoidal signal in route to the second end of the coil.
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