US 12,482,628 B2
Chlorine-containing precursors for ion implantation systems and related methods
Joseph R. Despres, Middletown, CT (US); and Ying Tang, Brookfield, CT (US)
Assigned to ENTEGRIS, INC., Billerica, MA (US)
Filed by ENTEGRIS, INC., Billerica, MA (US)
Filed on Aug. 22, 2023, as Appl. No. 18/236,719.
Claims priority of provisional application 63/399,772, filed on Aug. 22, 2022.
Prior Publication US 2024/0062987 A1, Feb. 22, 2024
Int. Cl. H01J 37/08 (2006.01); H01J 37/16 (2006.01); H01J 37/317 (2006.01)
CPC H01J 37/08 (2013.01) [H01J 37/16 (2013.01); H01J 37/3171 (2013.01); H01J 2237/006 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of ion implantation comprising:
obtaining a first vessel, the first vessel comprising a chlorine-containing source material;
vaporizing the chlorine-containing source material to obtain a chlorine-containing gas;
flowing the chlorine-containing gas from the first vessel to an ion source chamber of an ion implantation device;
contacting the chlorine-containing gas with a solid aluminum target material disposed within the ion source chamber; and
generating aluminum ions at the ion source chamber for implantation into a substrate.