US 12,482,610 B2
Method of producing a tantalum capacitor anode
John W. Koenitzer, Simpsonville, SC (US); and Javaid I. Qazi, Simpsonville, SC (US)
Assigned to KEMET Electronics Corporation, Fort Lauderdale, FL (US)
Filed by KEMET Electronics Corporation, Fort Lauderdale, FL (US)
Filed on May 24, 2023, as Appl. No. 18/201,451.
Claims priority of provisional application 63/348,095, filed on Jun. 2, 2022.
Prior Publication US 2023/0395329 A1, Dec. 7, 2023
Int. Cl. H01G 9/052 (2006.01); H01G 9/042 (2006.01); H01G 9/04 (2006.01)
CPC H01G 9/0525 (2013.01) [H01G 9/042 (2013.01); H01G 2009/05 (2013.01)] 56 Claims
OG exemplary drawing
 
1. A process for forming an anode comprising:
forming a dense aggregate comprising a powder and solvent in a pendular, funicular or capillary state;
forming said dense aggregate into an anode shape;
drying said anode shape to form an anode precursor; and
sintering said anode precursor to form the anode.