US 12,482,526 B2
Non-volatile memory and reference current generator thereof
Chih-Yang Huang, Hsinchu County (TW); and Woan-Yun Hsiao, Hsinchu County (TW)
Assigned to EMEMORY TECHNOLOGY INC., Hsin-Chu (TW)
Filed by eMemory Technology Inc., Hsin-Chu (TW)
Filed on Nov. 9, 2023, as Appl. No. 18/505,143.
Claims priority of provisional application 63/424,966, filed on Nov. 14, 2022.
Prior Publication US 2024/0161814 A1, May 16, 2024
Int. Cl. G11C 7/00 (2006.01); G11C 7/06 (2006.01); G11C 16/10 (2006.01); G11C 16/12 (2006.01); G11C 16/24 (2006.01); G11C 16/26 (2006.01); G11C 16/28 (2006.01); H10B 41/35 (2023.01); H10D 30/68 (2025.01); G11C 13/00 (2006.01)
CPC G11C 16/26 (2013.01) [G11C 7/062 (2013.01); G11C 7/065 (2013.01); G11C 16/10 (2013.01); G11C 16/12 (2013.01); G11C 16/24 (2013.01); G11C 16/28 (2013.01); H10B 41/35 (2023.02); H10D 30/6892 (2025.01); G11C 2013/0042 (2013.01)] 26 Claims
OG exemplary drawing
 
1. A non-volatile memory, comprising:
a memory module comprising plural data lines;
a sensing circuit coupled to the plural data lines of the memory module, wherein a first sense amplifier of the sensing circuit is coupled to a first data line of the plural data lines; and
a reference current generator receiving a supply voltage, wherein the reference current generator provides a reference current to the sensing circuit, and the reference current generator comprises:
a control voltage generation circuit receiving a control signal and generating a control voltage according to the control signal;
a first current path selecting circuit receiving a selection signal and the control voltage, wherein the first current path selecting circuit generates the reference current according to the control voltage and the selection signal; and
a mirroring circuit, wherein a current input terminal of the mirroring circuit receives the reference current, and a current mirroring terminal of the mirroring circuit is connected with the first sense amplifier, wherein in a first read cycle, the first sense amplifier determines a storage state of a selected memory cell according to a cell current in the first data line and the reference current,
wherein if the control signal is set as a first value, the reference current is changed at a first slope in a range of the supply voltage, wherein if the control signal is set as a second value, the reference current is changed at a second slope in the range of the supply voltage,
wherein the first value of the control signal is determined according to characteristics of an on current and an off current of the selected memory cell.