US 12,482,506 B2
Magnon junction, magnon random access memory, magnon microwave oscillator and detector, electronic device
Xiufeng Han, Beijing (CN); Leina Jiang, Beijing (CN); Wenqing He, Beijing (CN); and Tianyi Zhang, Beijing (CN)
Filed by Institute of Physics, Chinese Academy of Sciences, Beijing (CN)
Filed on Feb. 13, 2024, as Appl. No. 18/440,928.
Claims priority of application No. 202310147344.4 (CN), filed on Feb. 14, 2023.
Prior Publication US 2024/0274177 A1, Aug. 15, 2024
Int. Cl. G11C 11/00 (2006.01); G11C 11/16 (2006.01); H01F 10/32 (2006.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/85 (2023.01); H10N 52/85 (2023.01)
CPC G11C 11/161 (2013.01) [G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); H01F 10/3286 (2013.01); H10B 61/20 (2023.02); H10N 50/10 (2023.02); H10N 50/85 (2023.02); H10N 52/85 (2023.02)] 17 Claims
OG exemplary drawing
 
1. A magnon junction MJ comprising:
a first electrode layer formed by a non-magnetic conductive material;
a free magnetic layer arranged on the first electrode layer, and formed by a ferromagnetic conductive material;
an antiferromagnetic barrier layer arranged on the free magnetic layer, and formed by an antiferromagnetic insulator AFI material;
a reference magnetic layer arranged on the antiferromagnetic barrier layer, and formed by a ferromagnetic conductive material; and
a second electrode layer arranged on the reference magnetic layer, and formed by a non-magnetic conductive material,
wherein the reference magnetic layer has perpendicular magnetic anisotropy or a perpendicular magnetic moment component, a magnetic moment direction of which is fixed along a perpendicular direction,
wherein the free magnetic layer has perpendicular magnetic anisotropy or a perpendicular magnetic moment component, a magnetic moment direction of which is flippable along the perpendicular direction, and
wherein there is an exchange coupling on an interface between the antiferromagnetic barrier layer and the ferromagnetic conductive material, and when a magnetic moment of the free magnetic layer is switched, a magnetic moment of the antiferromagnetic barrier layer is also switched, thereby reducing a current density required for switching the magnetic moment of the free magnetic layer.