US 12,481,201 B2
Flexible infrared selective emitter and manufacturing method thereof
Hyung Hee Cho, Seoul (KR); Namkyu Lee, Gyeonggi-do (KR); Joon-Soo Lim, Gyeongsangbuk-do (KR); Injoong Chang, Seoul (KR); Juyeong Nam, Seoul (KR); Hyung Mo Bae, Seoul (KR); and Maroosol Yun, Seoul (KR)
Assigned to UIF (University Industry Foundation), Yonsei University, Seoul (KR)
Filed by UIF (University Industry Foundation), Yonsei University, Seoul (KR)
Filed on Dec. 22, 2022, as Appl. No. 18/087,755.
Claims priority of application No. 10-2022-0003764 (KR), filed on Jan. 11, 2022.
Prior Publication US 2023/0221618 A1, Jul. 13, 2023
Int. Cl. G02F 1/39 (2006.01); F41H 3/02 (2006.01); G02B 1/00 (2006.01)
CPC G02F 1/39 (2013.01) [G02B 1/002 (2013.01); F41H 3/02 (2013.01)] 2 Claims
OG exemplary drawing
 
1. A flexible infrared selective emitter, comprising:
(a) a substrate;
(b) a conductive thin film layer which is disposed on the substrate; and
(c) a meta-surface portion in which a plurality of structures in which an insulating layer and a metal layer are laminated are arranged to form a predetermined pattern on the conductive thin film layer;
wherein the insulating layer is any one selected from silicon nitride (Si3N4) and silicon oxide (SiO2);
wherein the metal layer is formed of gold (Au);
wherein, when the insulating layer is silicon nitride, the thickness of the insulating layer is 50 to 100 nm;
wherein, when the insulating layer is silicon oxide, the thickness of the insulating layer is 100 to 200 nm;
wherein the thickness of the metal layer is 100 to 300 nm;
wherein the size of the structure is 1 to 3 μm;
wherein the emissivity is 0.2 or less in infrared wavelength bands of 3 to 5 μm and 8 to 12 μm; and
wherein the flexible infrared selective emitter has a radius of curvature of 250 μm or more.