| CPC C30B 29/04 (2013.01) [C30B 25/16 (2013.01)] | 20 Claims |

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1. A method of forming a CVD diamond, the method comprising:
providing a single-crystal substrate; and
growing a first doped diamond layer directly or indirectly on the substrate, the first doped diamond layer including a first dopant, a second dopant, and a third dopant, each of the dopants being introduced into the CVD growth environment at non-trivial prescribed concentrations to produce a desired color that is closer to colorless on a diamond color scale relative to a diamond with any two of the three dopants, each of the three dopants being different from one another and being selected from the list of: boron, silicon, nitrogen, sulfur, phosphorous, chromium arsenic, nickel, germanium, cobalt, and aluminum.
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