	US 12,480,212 B2
	Chemical-dose substrate deposition monitoring
Albert Barrett Hicks, Sunnyvale, CA (US); and Serghei Malkov, Hayward, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Mar. 30, 2022, as Appl. No. 17/709,304.
Prior Publication US 2023/0313379 A1, Oct. 5, 2023
Int. Cl. C23C 16/52 (2006.01); C23C 16/455 (2006.01); G06N 20/20 (2019.01)

CPC C23C 16/52 (2013.01) [C23C 16/45544 (2013.01); G06N 20/20 (2019.01)]

16 Claims

1. A method, comprising:

receiving, by a processing device, first data characterizing a processed surface of a film disposed on a surface of a substrate processed within a recess of a sensor assembly positioned in a first region of a processing chamber, that was processed according to a non-line of sight deposition procedure;

determining, by the processing device based on the first data, a rate of advancement of a first processed surface boundary of the film across the surface of the substrate caused by the non-line of sight deposition procedure, wherein the rate of advancement is correlated with a dosage strength of a reactive species delivered to the first region of the processing chamber during the non-line of sight deposition procedure and a predicted depth of deposition within a feature of a patterned substrate at the region;

determining, by the processing device using the rate of advancement, the dosage strength of the reactive species delivered to the first region of the processing chamber; and

altering, by the processing device, an operation of the processing chamber for future execution of the non-line of sight deposition procedure based on the dosage strength.