US 12,480,204 B2
Physical vapor deposition apparatus
Kuo-Lung Huo, Hsinchu (TW); Wei-Chen Liao, Hsinchu (TW); and Ming-Hsien Lin, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jul. 11, 2024, as Appl. No. 18/769,687.
Application 18/769,687 is a division of application No. 17/395,186, filed on Aug. 5, 2021, granted, now 12,077,850.
Prior Publication US 2024/0360545 A1, Oct. 31, 2024
Int. Cl. H01J 37/34 (2006.01); C23C 14/14 (2006.01); C23C 14/35 (2006.01); C23C 14/54 (2006.01)
CPC C23C 14/54 (2013.01) [C23C 14/14 (2013.01); C23C 14/35 (2013.01); H01J 37/3447 (2013.01); H01J 37/3476 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A physical vapor deposition (PVD) apparatus, comprising:
a collimator configured to filter sputtered particles to form a beam comprising sputtered particles;
an electrostatic chuck configured to support a substrate in a chamber;
a shield; and
a chamber plate comprising:
a plurality of nut plates; and
a plurality of cavities in the chamber plate that are configured to allow gas to ingress and egress, wherein the cavities and the nut plates are provided in equal numbers;
wherein the chamber is configured to operate at a target pressure, and a number of the nut plates and a corresponding number of the cavities are determined based on the target pressure, and
wherein each of the nut plates is tunable in length.