| CPC C23C 14/081 (2013.01) [B65D 65/42 (2013.01); C08J 7/048 (2020.01); C08J 7/06 (2013.01); C23C 14/24 (2013.01); C23C 14/58 (2013.01); B32B 27/16 (2013.01); B32B 27/36 (2013.01); B32B 2255/20 (2013.01); B32B 2255/26 (2013.01); B32B 2255/28 (2013.01); B32B 2307/7244 (2013.01); B32B 2307/7246 (2013.01); B32B 2439/46 (2013.01); B32B 2439/70 (2013.01); C08J 2367/00 (2013.01); C08J 2367/02 (2013.01)] | 12 Claims |

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1. A barrier film, consisting of a substrate consisting of poly(ethylene terephthalate), a vapor-deposited film consisting of aluminum oxide, and optionally a gas barrier coating film located on a surface of the vapor-deposited film,
wherein the substrate has a pretreated surface that is plasma-pretreated by generating a glow discharge between a pretreatment roller around which the substrate is wrapped and that conveys the substrate and an electrode section that includes a first surface that faces the pretreatment roller and is flat, by applying an AC voltage of 600 V or more and 800 V or less,
the vapor-deposited film is formed on the pretreated surface,
the vapor-deposited film has a thickness of 3 nm or more and 100 nm or less, and
when at least an elemental bond of Al2O3 and an elemental bond of CN are detected by etching the barrier film using time-of-flight secondary ion mass spectrometry from a side adjacent to the vapor-deposited film,
a peak intensity of a peak of the elemental bond of CN detected at an interface between the substrate and the vapor-deposited film is 0.15 or more times a maximum intensity value of the elemental bond of Al2O3.
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