US 12,480,200 B2
Method of quality determining of deposition mask, method of manufacturing deposition mask, method of manufacturing deposition mask device, method of selecting deposition mask, and deposition mask
Chikao Ikenaga, Tokyo (JP)
Assigned to Dai Nippon Printing Co., Ltd., Tokyo (JP)
Filed by DAI NIPPON PRINTING CO., LTD., Tokyo (JP)
Filed on Jun. 5, 2023, as Appl. No. 18/329,004.
Application 18/329,004 is a division of application No. 17/142,582, filed on Jan. 6, 2021.
Application 17/142,582 is a continuation of application No. PCT/JP2019/023374, filed on Jun. 12, 2019.
Claims priority of application No. 2018-130259 (JP), filed on Jul. 9, 2018.
Prior Publication US 2023/0329077 A1, Oct. 12, 2023
Int. Cl. G03F 7/00 (2006.01); C23C 14/04 (2006.01); G06T 7/00 (2017.01); H10K 71/16 (2023.01)
CPC C23C 14/042 (2013.01) [G03F 7/0015 (2013.01); G06T 7/0006 (2013.01); H10K 71/164 (2023.02); H10K 71/166 (2023.02); G06T 2207/30108 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A method of manufacturing a deposition mask extending in a first direction, the method comprising:
a step of supplying an elongated metal plate extending in a strip shape;
a step of etching the metal plate by a photolithographic technique to form a first recess in the metal plate from a first surface side; and
a step of etching the metal plate by the photolithography technique to form a second recess in the metal plate from a second surface side,
the deposition mask comprises:
a first center axis line that extends in the first direction and is arranged at a center position of a second direction orthogonal to the first direction;
a P1 point and a Q1 point that are provided on one side of the first center axis line and are spaced apart from each other along the first direction; and
a P2 point and a Q2 point that are provided on the other side of the first center axis line and are spaced apart from each other along the first direction, and
a plurality of through holes formed by communicating the first recess and the second recess with each other,
wherein the deposition mask satisfies an equation below:

OG Complex Work Unit Math
in which X1 represents a dimension from the P1 point to the Q1 point, X2 represents a dimension from the P2 point to the Q2 point, and αX represents a design value of the dimension X1 and the dimension X2,
wherein through holes of the plurality of through holes are positioned between the P1 point and the Q1 point in the first direction, and
other through holes of the plurality of through holes are positioned between the P2 point and the Q2 point in the first direction.