US 12,480,025 B2
Composition
Tometomo Uchida, Tokyo (JP); Toru Arai, Tokyo (JP); Takashi Domoto, Tokyo (JP); Takako Tanigawa, Tokyo (JP); Jun Watanabe, Tokyo (JP); Megumi Sudo, Tokyo (JP); and Jun Yoshida, Tokyo (JP)
Assigned to DENKA COMPANY LIMITED, Tokyo (JP)
Appl. No. 17/923,377
Filed by DENKA COMPANY LIMITED, Tokyo (JP)
PCT Filed May 17, 2021, PCT No. PCT/JP2021/018671
§ 371(c)(1), (2) Date Nov. 4, 2022,
PCT Pub. No. WO2021/235406, PCT Pub. Date Nov. 25, 2021.
Claims priority of application No. 2020-089229 (JP), filed on May 21, 2020; and application No. 2020-198857 (JP), filed on Nov. 30, 2020.
Prior Publication US 2023/0193090 A1, Jun. 22, 2023
Int. Cl. C09J 123/22 (2006.01); C08F 2/44 (2006.01); C08F 2/48 (2006.01); C08F 20/20 (2006.01); C08K 5/00 (2006.01); C08K 5/101 (2006.01); C09J 11/06 (2006.01); H01L 21/02 (2006.01)
CPC C09J 123/22 (2013.01) [C08F 2/44 (2013.01); C08F 2/48 (2013.01); C08F 20/20 (2013.01); C08K 5/0025 (2013.01); C08K 5/101 (2013.01); C09J 11/06 (2013.01); H01L 21/02304 (2013.01); H01L 21/0231 (2013.01)] 1 Claim
 
1. A method for producing a semiconductor wafer, the method comprising the steps of:
applying an adhesive for temporary bonding to a semiconductor wafer substrate and/or a support member to bond the semiconductor wafer substrate and the support member;
curing the adhesive for temporary bonding by irradiating light having a wavelength of 350 nm to 700 nm to obtain a bonded body,
wherein the cured adhesive satisfies all the following conditions:
in a light transmittance of a film of the cured adhesive having a thickness of 50 μm, a light transmittance in a wavelength region of 395 nm or more among the wavelengths of a light source used for curing is 70% or more,
in a light transmittance of a film of the cured adhesive having a thickness of 50 μm, a light transmittance in a wavelength region of 385 nm or more and less than 395 nm among the wavelengths of a light source used for curing is 20% or more, and
in a light transmittance of a film of the cured adhesive having a thickness of 50 μm, a light transmittance at a wavelength of 355 nm of UV laser is 1% or less; and
irradiating the bonded body with laser light having a wavelength of less than 385 nm to release the semiconductor wafer substrate, wherein
the cured adhesive for temporary bonding constitutes a single layer in the bonded body.