US 12,480,021 B2
Composition for semiconductor process, method for preparing the same and method for preparing semiconductor device using the same
Seung Chul Hong, Seoul (KR); Deok Su Han, Seoul (KR); Han Teo Park, Seoul (KR); Hwan Chul Kim, Gyeonggi-do (KR); Kyu Hun Kim, Gyeonggi-do (KR); and Eun Sun Joeng, Gyeonggi-do (KR)
Assigned to SK enpulse Co., Ltd., Gyeonggi-do (KR)
Filed by SK enpulse Co., Ltd., Gyeonggi-do (KR)
Filed on Jan. 19, 2023, as Appl. No. 18/099,031.
Claims priority of application No. 10-2022-0008308 (KR), filed on Jan. 20, 2022.
Prior Publication US 2023/0227696 A1, Jul. 20, 2023
Int. Cl. C09G 1/02 (2006.01); C09K 3/14 (2006.01); H01L 21/321 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01)
CPC C09G 1/02 (2013.01) [C09K 3/1436 (2013.01); H01L 21/3212 (2013.01); H01L 21/7684 (2013.01); H01L 23/53266 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A composition for a semiconductor process comprising:
abrasive particles,
wherein the abrasive particles have a zeta potential of-50 mV to-10 mV at pH 6, a zeta potential change rate represented by Equation 1 below of 6 mV/pH to 30 mV/pH, a zeta potential change rate represented by Equation 3 below of 8 mV/pH to 20 m V/pH, and a zeta potential change rate represented by Equation 4 below of 9.5 mV/pH to 20 mV/pH:
Zeta potential change rate (mV/pH)=|(Z6−Z5)/(p6−p5)|  [Equation 1]
Zeta potential change rate=|(Z6−Z1)/(p6−p1)|  [Equation 3]
Zeta potential change rate=|(Z6−Z2)/(p6−p2)|  [Equation 4]
where p6 denotes pH 6, p5 denotes pH 5, p2 denotes pH 2, pl denotes pH 1,
Z6 denotes a zeta potential at the pH 6, and Z5 denotes a zeta potential at the pH 5, Z2 denotes a zeta potential at the pH 2, and Z1 denotes a zeta potential at the pH 1.