US 12,479,733 B2
Polysilicon rod and method for manufacturing polysilicon rod
Atsushi Yoshida, Joetsu (JP); Naruhiro Hoshino, Joetsu (JP); Masahiko Ishida, Joetsu (JP); and Takeshi Aoyama, Joetsu (JP)
Assigned to SHIN-ETSU CHEMICAL CO., LTD., Tokyo (JP)
Filed by Shin-Etsu Chemical Co., Ltd., Tokyo (JP)
Filed on Oct. 2, 2023, as Appl. No. 18/479,801.
Application 18/479,801 is a continuation of application No. 17/353,509, filed on Jun. 21, 2021, abandoned.
Claims priority of application No. 2020-108123 (JP), filed on Jun. 23, 2020.
Prior Publication US 2024/0025754 A1, Jan. 25, 2024
Int. Cl. C01B 33/035 (2006.01)
CPC C01B 33/035 (2013.01) [C01P 2002/60 (2013.01); C01P 2004/02 (2013.01)] 3 Claims
OG exemplary drawing
 
1. A method for manufacturing a single crystal silicon comprising:
manufacturing a polysilicon rod or polysilicon rods;
selecting a representative polysilicon rod from the polysilicon rod or the polysilicon rods;
determining boundary features of the representative polysilicon rod in an area including the entire representative polysilicon rod excluding a seed core;
selecting a polysilicon rod or polysilicon rods satisfying the boundary features, where the boundary features are a coincidence grain boundary ratio that exceeds 20%, a grain boundary length that exceeds 550 mm/mm2, and a random grain boundary length that does not exceed 800 mm/mm2; and
manufacturing the single crystal silicon by a floating zone (FZ) method using the polysilicon rod or polysilicon rods that satisfy the boundary features along with raw materials.