US 12,479,719 B2
MEMS structure
Fan Hu, Taipei (TW); Wen-Chuan Tai, Hsinchu (TW); Li-Chun Peng, Hsin-Chu (TW); and Hsiang-Fu Chen, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Apr. 19, 2022, as Appl. No. 17/724,157.
Prior Publication US 2023/0331546 A1, Oct. 19, 2023
Int. Cl. B81C 3/00 (2006.01); B81B 7/00 (2006.01)
CPC B81C 3/001 (2013.01) [B81B 7/0038 (2013.01); B81B 7/0083 (2013.01); B81C 2201/0118 (2013.01); B81C 2203/0109 (2013.01); B81C 2203/0172 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A microelectromechanical systems (MEMS) package, comprising:
a metallization layer over a semiconductor substrate;
a planarization structure over the metallization layer, having an inner sidewall defining a first cavity exposing the metallization layer;
a MEMS device structure bonded to the planarization structure, wherein the MEMS device structure comprises a movable element over the first cavity;
a cap structure bonded to the MEMS device structure, having an inner sidewall defining a second cavity facing the movable element;
a pressure adjustment element disposed in the second cavity; and
a stopper protruded from the cap structure toward the second cavity and exposed through the pressure adjustment element.