US 12,479,048 B2
Wafer processing apparatus
Kentaro Iizuka, Tokyo (JP); Kazuya Hirata, Tokyo (JP); Hayato Iga, Tokyo (JP); Hironobu Ozawa, Tokyo (JP); Mato Hattori, Tokyo (JP); and Hideo Iwata, Tokyo (JP)
Assigned to DISCO CORPORATION, Tokyo (JP)
Filed by DISCO CORPORATION, Tokyo (JP)
Filed on Dec. 5, 2023, as Appl. No. 18/529,690.
Claims priority of application No. 2022-195562 (JP), filed on Dec. 7, 2022; and application No. 2023-190773 (JP), filed on Nov. 8, 2023.
Prior Publication US 2024/0194501 A1, Jun. 13, 2024
Int. Cl. B23K 26/53 (2014.01); B23K 26/06 (2014.01); B23K 26/067 (2006.01); B23K 26/364 (2014.01); H01L 21/66 (2006.01); H01L 21/67 (2006.01); H01L 21/677 (2006.01); H01L 21/687 (2006.01); B23K 103/00 (2006.01)
CPC B23K 26/53 (2015.10) [B23K 26/0608 (2013.01); B23K 26/0676 (2013.01); B23K 26/364 (2015.10); H01L 21/67028 (2013.01); H01L 21/67092 (2013.01); H01L 21/67155 (2013.01); H01L 21/67219 (2013.01); H01L 21/67242 (2013.01); H01L 21/67253 (2013.01); H01L 21/67766 (2013.01); H01L 21/68728 (2013.01); H01L 22/14 (2013.01); B23K 2103/56 (2018.08)] 20 Claims
OG exemplary drawing
 
1. A processing apparatus for processing a wafer including in a face side thereof a device region containing a plurality of devices therein and an outer circumferential excessive region including a beveled portion on an outer circumferential end portion thereof, the processing apparatus comprising:
a chuck table for holding the wafer thereon;
a grinding unit for grinding the wafer held on the chuck table;
a cleaning unit for cleaning the wafer; and
a controller;
a processing unit, wherein the controller is configured to control the processing unit to perform a process of removing the beveled portion of the outer circumferential end portion of the wafer before the grinding unit grinds the wafer,
wherein the processing unit includes a support for supporting the wafer with a surface thereof being exposed and a laser beam applying unit for emitting a laser beam having a wavelength transmittable through the wafer, and
wherein the controller is configured to control the laser beam applying unit to apply the laser beam to the wafer supported on the support, from the exposed surface, while positioning a focused spot thereof within the outer circumferential excessive region of the wafer, to form a modified layer in the wafer along which to remove the beveled portion from the wafer.
 
11. A processing apparatus for processing a wafer including in a face side thereof a device region containing a plurality of devices therein and an outer circumferential excessive region including a beveled portion on an outer circumferential end portion thereof, the processing apparatus comprising:
a chuck table for holding the wafer thereon;
a grinding unit for grinding the wafer held on the chuck table;
a cleaning unit for cleaning the wafer; and
a controller;
a processing unit, wherein the controller is configured to control the processing unit to remove the beveled portion of the outer circumferential end portion of the wafer before the grinding unit grinds the wafer,
wherein the processing unit includes a support for supporting the wafer with a surface thereof being exposed and a laser beam applying unit for emitting a laser beam having a wavelength transmittable through the wafer, and
wherein the controller is configured to control the laser beam applying unit to apply the laser beam to the wafer supported on the support, from the exposed surface, while positioning a focused spot thereof within the outer circumferential excessive region of the wafer, to form a modified layer in the wafer along which to remove the beveled portion from the wafer.
 
19. A processing apparatus for processing a wafer including in a face side thereof a device region containing a plurality of devices therein and an outer circumferential excessive region including a beveled portion on an outer circumferential end portion thereof, the processing apparatus comprising:
a chuck table for holding the wafer thereon;
a grinding unit for grinding the wafer held on the chuck table;
a cleaning unit for cleaning the wafer; and
a controller;
a processing unit, wherein the controller is configured to control the processing unit to perform a process of removing the beveled portion of the outer circumferential end portion of the wafer,
wherein the processing unit includes a support for supporting the wafer with a surface thereof being exposed and a laser beam applying unit for emitting a laser beam having a wavelength transmittable through the wafer, and
wherein the controller is configured to control the laser beam applying unit to apply the laser beam to the wafer supported on the support, from the exposed surface, while positioning a focused spot thereof within the outer circumferential excessive region of the wafer, to form a modified layer in the wafer along which to remove the beveled portion from the wafer.