US 12,150,393 B2
Heater for phase change material memory cell
Victor W. C. Chan, Guilderland, NY (US); Jin Ping Han, Yorktown Heights, NY (US); Samuel Sung Shik Choi, Ballston Lake, NY (US); and Injo Ok, Loudonville, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on Sep. 30, 2022, as Appl. No. 17/936,982.
Prior Publication US 2024/0114807 A1, Apr. 4, 2024
Int. Cl. H10N 70/20 (2023.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01)
CPC H10N 70/231 (2023.02) [H10B 63/30 (2023.02); H10N 70/021 (2023.02); H10N 70/063 (2023.02); H10N 70/066 (2023.02); H10N 70/068 (2023.02); H10N 70/8613 (2023.02); H10N 70/883 (2023.02)] 19 Claims
OG exemplary drawing
 
1. An integrated circuit comprising:
a field effect transistor (FET);
an interconnect connected to a gate of the FET; and
a phase change memory (PCM) cell comprising a phase change section and a first heater, wherein a bottom surface of the first heater is at or below a top surface of the gate, and wherein a top surface of the phase change section is at or below the top surface of the interconnect.