US 12,150,392 B2
Transfer length phase change material (PCM) based bridge cell
Guy M. Cohen, Westchester, NY (US); Takashi Ando, Eastchester, NY (US); and Nanbo Gong, White Plains, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Dec. 22, 2020, as Appl. No. 17/130,068.
Prior Publication US 2022/0199899 A1, Jun. 23, 2022
Int. Cl. H10N 70/20 (2023.01); H10B 63/10 (2023.01); H10N 70/00 (2023.01)
CPC H10N 70/231 (2023.02) [H10B 63/10 (2023.02); H10N 70/8828 (2023.02); H10N 70/8833 (2023.02)] 14 Claims
OG exemplary drawing
 
1. A neuromorphic device comprising:
a phase change material (PCM) bar, with the phase change material bar being structured and configured to have at least two portions, a first narrow portion and a second narrow portion, that are joined by the first narrow portion, and with the first narrow portion being located at the center of the phase change material bar and the second narrow portion being located at the end of the PCM bar, wherein the PCM bar is encapsulated and wherein the PCM bar includes at least a first crystalline-phase portion and at least a first amorphous-phase portion;
a resistive liner located adjacent the phase change material bar, with the resistive liner being a conduit for conducting at least a portion of a first electric current, wherein the resistive liner includes an insulator region located at each end of the resistive liner and wherein the insulator region limits the resistive liner span on each side to one transfer length and wherein the one transfer length is measured from the second narrow portion end of the PCM bar to the start of the insulation region
and wherein resistance of the resistive liner is equal to resistance of the first crystalline-phase portion of the PCM bar but lower than the first amorphous-phase portion of the PCM bar;
an interfacial layer located between the resistive liner and the phase change material bar, with the interfacial layer having a tunable contact resistance, based on composition and thickness of the interfacial layer; and
a set of ohmic contact portions, with at least one ohmic contact of the set of ohmic contact portions being located at each end of the phase change material bar.