US 12,150,391 B2
Metal oxide liner for cross-point phase change memory cell
Hari Chandrasekaran, Portland, OR (US); Rajesh Venkatasubramanian, Albuquerque, NM (US); and Hoi-Sung Chung, Albuquerque, NM (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Sep. 25, 2020, as Appl. No. 17/033,271.
Prior Publication US 2022/0102625 A1, Mar. 31, 2022
Int. Cl. H10N 70/20 (2023.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01)
CPC H10N 70/231 (2023.02) [H10B 63/30 (2023.02); H10N 70/063 (2023.02); H10N 70/841 (2023.02); H10N 70/882 (2023.02); H10N 70/8833 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A phase change memory structure, comprising
a memory cell material stack coupled to and between first and second electrodes, the memory cell material stack comprising at least a phase change material layer and a switching device; and
a liner on one or more sidewalls of the memory cell material stack, the liner comprising a first material layer on the one or more sidewalls and a second material layer on the first material layer, the first material layer comprising lanthanum and oxygen, and the second material layer comprising oxygen and aluminum or hafnium.