CPC H10N 60/82 (2023.02) [H10N 60/01 (2023.02); H10N 60/81 (2023.02)] | 21 Claims |
1. An electronic structure comprising:
a first substrate having a first under bump metallization (UBM) region and a second UBM region formed thereon;
one or more solder bumps on the first UBM region;
a downstop formed on the second UBM region that is wider, shallower and more rigid than any one of the solder bumps formed on the first UBM region; and
a second substrate joined to the first substrate by the one or more solder bumps located on the first UBM region, wherein a height of the downstop limits a distance between at least one of the first substrate and the second substrate, or between an object and at least one of the first substrate and the second substrate, wherein the height of the downstop and a height of the one or more solder bumps is based on a volume of solder deposited the first UBM region and the second UBM region, and by an area of the under-bump metallurgy for each of the first UBM region and the second UBM region.
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