US 12,150,319 B2
High sensitivity stable sensors and methods for manufacturing same
Canek Fuentes-Hernandez, Atlanta, GA (US); Wen-Fang Chou, Atlanta, GA (US); Xiaojia Jia, Atlanta, GA (US); and Bernard Kippelen, Atlanta, GA (US)
Assigned to Georgia Tech Research Corporation, Atlanta, GA (US)
Appl. No. 17/429,334
Filed by Georgia Tech Research Corporation, Atlanta, GA (US)
PCT Filed Feb. 7, 2020, PCT No. PCT/US2020/017260
§ 371(c)(1), (2) Date Aug. 7, 2021,
PCT Pub. No. WO2020/176223, PCT Pub. Date Sep. 3, 2020.
Claims priority of provisional application 62/803,360, filed on Feb. 8, 2019.
Prior Publication US 2022/0123240 A1, Apr. 21, 2022
Int. Cl. H10K 30/81 (2023.01); H10K 10/46 (2023.01); H10K 19/10 (2023.01)
CPC H10K 10/482 (2023.02) [H10K 10/476 (2023.02); H10K 19/10 (2023.02)] 22 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a field-effect transistor;
a sensor; and
a substrate;
wherein the field-effect transistor comprises:
a first gate electrode;
a second gate electrode having a first length, a first portion and a second portion;
a source electrode;
a drain electrode;
a semiconductor layer having a first side and a second side;
a bi-layer gate insulator; and
a second gate insulator having a second length shorter than the first length and located between the first portion of the second gate electrode and the second side of the semiconductor layer;
wherein the sensor is located on the second portion of the second gate electrode and is in electrical communication with the second gate electrode; and
wherein at least a portion of the second gate electrode is located between the substrate and the second gate insulator.