US 12,150,314 B2
Magnetoresistive random access memory
Kuo-Hsing Lee, Hsinchu County (TW); Sheng-Yuan Hsueh, Tainan (TW); Te-Wei Yeh, Kaohsiung (TW); and Chien-Liang Wu, Tainan (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Nov. 17, 2023, as Appl. No. 18/512,058.
Application 18/512,058 is a continuation of application No. 18/088,761, filed on Dec. 26, 2022, granted, now 11,864,391.
Application 18/088,761 is a continuation of application No. 16/924,169, filed on Jul. 8, 2020, granted, now 11,569,295, issued on Jan. 31, 2023.
Claims priority of application No. 202010528241.9 (CN), filed on Jun. 11, 2020.
Prior Publication US 2024/0090234 A1, Mar. 14, 2024
Int. Cl. H10B 61/00 (2023.01); G11C 7/18 (2006.01); H10N 50/80 (2023.01)
CPC H10B 61/20 (2023.02) [G11C 7/18 (2013.01); H10N 50/80 (2023.02)] 8 Claims
OG exemplary drawing
 
1. A magnetoresistive random access memory (MRAM), comprising:
a first transistor and a second transistor on a substrate;
a source line coupled to a first source/drain region of the first transistor; and
a first metal interconnection coupled to a second source/drain region of the first transistor, wherein the first metal interconnection is extended to overlap the second transistor and an end of the first metal interconnection is coupled to a magnetic tunneling junction (MTJ).