US 12,150,311 B2
Embedded ferroelectric FinFET memory device
Bo-Feng Young, Taipei (TW); Chung-Te Lin, Tainan (TW); Sai-Hooi Yeong, Zhubei (TW); Yu-Ming Lin, Hsinchu (TW); Sheng-Chih Lai, Hsinchu County (TW); Chih-Yu Chang, New Taipei (TW); and Han-Jong Chia, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Aug. 3, 2023, as Appl. No. 18/364,616.
Application 17/867,998 is a division of application No. 16/798,719, filed on Feb. 24, 2020, granted, now 11,508,753, issued on Nov. 22, 2022.
Application 18/364,616 is a continuation of application No. 17/867,998, filed on Jul. 19, 2022, granted, now 11,832,450.
Prior Publication US 2023/0403860 A1, Dec. 14, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H10B 51/30 (2023.01); G11C 11/22 (2006.01); H01L 27/12 (2006.01)
CPC H10B 51/30 (2023.02) [G11C 11/223 (2013.01); H01L 27/1211 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A ferroelectric memory device, comprising:
a pair of source/drain regions disposed in a substrate;
a gate dielectric disposed over the substrate and between the pair of source/drain regions;
a gate electrode disposed on the gate dielectric;
a polarization switching structure disposed over the gate electrode with a lateral dimension smaller than that of the gate electrode; and
a pair of sidewall spacers disposed over the substrate and along opposite sidewalls of the gate electrode and the polarization switching structure.