US 12,150,310 B2
Ferroelectric random-access memory cell
Kangguo Cheng, Schenectady, NY (US); Julien Frougier, Albany, NY (US); Ruilong Xie, Niskayuna, NY (US); Chanro Park, Clifton Park, NY (US); and Min Gyu Sung, Latham, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on Aug. 16, 2022, as Appl. No. 17/819,955.
Prior Publication US 2024/0064997 A1, Feb. 22, 2024
Int. Cl. H01L 29/78 (2006.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H10B 51/30 (2023.01)
CPC H10B 51/30 (2023.02) [H01L 29/40111 (2019.08); H01L 29/42368 (2013.01); H01L 29/516 (2013.01); H01L 29/66666 (2013.01); H01L 29/6684 (2013.01); H01L 29/7827 (2013.01); H01L 29/78391 (2014.09)] 12 Claims
OG exemplary drawing
 
1. A ferroelectric random-access memory (FeRAM) cell comprising:
a vertical channel between a bottom source/drain region and a top source/drain region;
a gate oxide surrounding the vertical channel; and
a ferroelectric layer surrounding the gate oxide,
wherein the ferroelectric layer has two or more sections of different horizontal thicknesses between the bottom source/drain region and the top source/drain region, and wherein the ferroelectric layer comprises a bottom section, a middle section, and a top section of three different horizontal thicknesses, the three different horizontal thicknesses being arranged in a staircase shape.