US 12,150,302 B2
Memory device including mixed oxide charge trapping materials and methods for forming the same
Ramy Nashed Bassely Said, San Jose, CA (US); Senaka Kanakamedala, San Jose, CA (US); Raghuveer S. Makala, Campbell, CA (US); Peng Zhang, San Jose, CA (US); and Yanli Zhang, San Jose, CA (US)
Assigned to SANDISK TECHNOLOGIES LLC, Addison, TX (US)
Filed by SANDISK TECHNOLOGIES LLC, Addison, TX (US)
Filed on Feb. 24, 2022, as Appl. No. 17/679,335.
Prior Publication US 2023/0269939 A1, Aug. 24, 2023
Int. Cl. H01L 27/11582 (2017.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01)
CPC H10B 43/27 (2023.02) [H10B 43/10 (2023.02); H10B 43/35 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A memory device, comprising:
an alternating stack of insulating layers and electrically conductive layers located over a substrate;
a memory opening vertically extending through the alternating stack; and
a memory opening fill structure located in the memory opening and comprising a vertical semiconductor channel and a memory film,
wherein the memory film comprises:
a tunneling dielectric layer in contact with the vertical semiconductor channel;
a first vertical stack of first dielectric oxide material portions located at levels of the insulating layers and comprising a dielectric oxide material of a first element selected from Al, Si, or transition metal element; and
a second vertical stack of second dielectric oxide material portions located at levels of the electrically conductive layers and comprising a mixed dielectric oxide material that is a dielectric oxide material of the first element and a second element that is selected from Al, Si, or transition metal element and different from the first element.