US 12,149,845 B2
Image sensor, imaging device, and ranging device
Hideki Arai, Kanagawa (JP); Yusuke Otake, Kanagawa (JP); Takuro Murase, Kanagawa (JP); Takeshi Yamazaki, Kanagawa (JP); and Taisuke Suwa, Kanagawa (JP)
Assigned to SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Appl. No. 17/759,118
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Jan. 25, 2021, PCT No. PCT/JP2021/002376
§ 371(c)(1), (2) Date Jul. 20, 2022,
PCT Pub. No. WO2021/153480, PCT Pub. Date Aug. 5, 2021.
Claims priority of application No. 2020-012436 (JP), filed on Jan. 29, 2020.
Prior Publication US 2023/0044912 A1, Feb. 9, 2023
Int. Cl. H04N 25/65 (2023.01); H04N 25/71 (2023.01); H04N 25/772 (2023.01)
CPC H04N 25/65 (2023.01) [H04N 25/71 (2023.01); H04N 25/772 (2023.01)] 17 Claims
OG exemplary drawing
 
1. An image sensor, comprising:
a substrate that includes a photodiode configured to perform photoelectric conversion;
a floating diffusion configured to accumulate charges from the photodiode;
a transfer transistor configured to transfer the charges from the photodiode to the floating diffusion;
a reset transistor configured to reset the floating diffusion;
a reset voltage control transistor configured to control a voltage applied to the reset transistor;
an additional control transistor configured to control addition of capacitance to the floating diffusion, wherein the floating diffusion includes a plurality of regions in the substrate; and
a multilayer wiring layer on the substrate, wherein
the multilayer wiring layer includes:
first wirings that connect the plurality of regions, and
second wirings that are a part of the floating diffusion, and
the first wirings and the second wirings are in different layers of the multilayer wiring layer.