US 12,149,240 B2
Drive control circuit for power semiconductor element, power semiconductor module, and power converter
Takeshi Horiguchi, Tokyo (JP); and Yasushige Mukunoki, Tokyo (JP)
Assigned to MITSUBISHI ELECTRIC CORPORATION, Tokyo (JP)
Appl. No. 18/014,174
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
PCT Filed Aug. 25, 2020, PCT No. PCT/JP2020/032033
§ 371(c)(1), (2) Date Jan. 3, 2023,
PCT Pub. No. WO2022/044123, PCT Pub. Date Mar. 3, 2022.
Prior Publication US 2023/0261653 A1, Aug. 17, 2023
Int. Cl. H03K 17/687 (2006.01); H03K 17/042 (2006.01); H03K 17/082 (2006.01)
CPC H03K 17/6871 (2013.01) [H03K 17/04206 (2013.01); H03K 17/0822 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A drive control circuit for a power semiconductor element having a control electrode, a positive-side electrode, and a negative-side electrode, the drive control circuit comprising:
a driver to drive the power semiconductor element by transitioning a voltage applied between the control electrode and the negative-side electrode;
a gate current detector to detect a gate current flowing between the driver and the control electrode;
a gate charge amount calculator to calculate a gate charge amount to be supplied to the power semiconductor element, based on an amount of the gate current detected by the gate current detector; and
a short-circuit detector to detect an arm short circuit or a load short circuit, based on a magnitude of the gate current and a magnitude of the gate charge amount,
the short-circuit detector including:
a gate current determinator to compare the magnitude of the gate current with at least one reference value;
a gate charge amount determinator to compare the magnitude of the gate charge amount with at least one reference value; and
a short-circuit detection logical operation circuitry to execute a logical operation of an output signal of the gate current determinator and an output signal of the gate charge amount determinator.