US 12,149,235 B2
Radio frequency switch
Jungchul Gong, Suwon-si (KR); and Jooyul Ko, Suwon-si (KR)
Assigned to Samsung Electro-Mechanics Co., Ltd., Suwon-si (KR)
Filed by SAMSUNG ELECTRO-MECHANICS CO., LTD., Suwon-si (KR)
Filed on Feb. 27, 2023, as Appl. No. 18/114,403.
Claims priority of application No. 10-2022-0077649 (KR), filed on Jun. 24, 2022; and application No. 10-2022-0158124 (KR), filed on Nov. 23, 2022.
Prior Publication US 2023/0421150 A1, Dec. 28, 2023
Int. Cl. H03K 17/16 (2006.01)
CPC H03K 17/165 (2013.01) 9 Claims
OG exemplary drawing
 
1. A radio frequency (RF) switch, comprising:
a switch transistor comprising a first terminal to which a radio frequency (RF) signal is input, a second terminal to which the RF signal is output, a control terminal to which a first level voltage and a second level voltage are applied in response to a control signal, and a body terminal to which a bias voltage is applied; and
a bias switch, connected between the control terminal and the body terminal of the switch transistor, and configured to turn on when the switch transistor is turned off to apply the second level voltage to the body terminal,
wherein a control terminal of the bias switch is connected to a ground terminal.