US 12,149,228 B2
Acoustic wave device, wafer, and method of manufacturing wafer
Shinji Yamamoto, Tokyo (JP); Koichi Sato, Tokyo (JP); and Toshiharu Nakazato, Tokyo (JP)
Assigned to TAIYO YUDEN CO., LTD., Tokyo (JP)
Filed by TAIYO YUDEN CO., LTD., Tokyo (JP)
Filed on Nov. 21, 2022, as Appl. No. 17/991,259.
Claims priority of application No. 2021-212072 (JP), filed on Dec. 27, 2021.
Prior Publication US 2023/0208395 A1, Jun. 29, 2023
Int. Cl. H03H 9/25 (2006.01); H03H 9/02 (2006.01); H03H 9/145 (2006.01); H03H 9/64 (2006.01); H03H 9/72 (2006.01); H10N 30/073 (2023.01)
CPC H03H 9/25 (2013.01) [H03H 9/02559 (2013.01); H03H 9/14541 (2013.01); H03H 9/6483 (2013.01); H03H 9/725 (2013.01); H10N 30/073 (2023.02)] 13 Claims
OG exemplary drawing
 
1. An acoustic wave device comprising:
a support substrate;
a piezoelectric layer provided on the support substrate;
at least a pair of comb-shaped electrodes provided on the piezoelectric layer, each of the comb-shaped electrodes including a plurality of electrode fingers; and
an insulating layer provided between the support substrate and the piezoelectric layer, the insulating layer having, in at least a part thereof, a plurality of void regions of which extending directions are different from each other when viewed from a thickness direction of the support substrate, a width in the corresponding extending direction of each of the void regions being longer than a width in a direction orthogonal to the corresponding extending direction when viewed from the thickness direction of the support substrate.