US 12,149,213 B2
Wideband multi gain LNA architecture
Emre Ayranci, Costa Mesa, CA (US); Mengsheng Rui, San Diego, CA (US); and Jubaid Qayyum, San Diego, CA (US)
Assigned to Murata Manufacturing Co., Ltd., Kyoto (JP)
Filed by Murata Manufacturing Co., Ltd., Kyoto (JP)
Filed on Jun. 2, 2021, as Appl. No. 17/337,227.
Prior Publication US 2022/0393650 A1, Dec. 8, 2022
Int. Cl. H03F 3/193 (2006.01); H03F 1/56 (2006.01); H04B 1/40 (2015.01)
CPC H03F 1/565 (2013.01) [H03F 3/193 (2013.01); H03F 2200/294 (2013.01); H03F 2200/387 (2013.01); H03F 2200/451 (2013.01); H04B 1/40 (2013.01)] 22 Claims
OG exemplary drawing
 
1. An amplifier including:
(a) an amplifier core including:
(1) an input terminal configured to receive a radio-frequency (RF) signal; and
(2) an amplified-signal terminal;
(b) an output capacitor coupled to a node;
(c) a multi-mode inductor circuit having a first terminal coupled to the amplified-signal terminal and a second terminal connected to the node, the multi-mode inductor circuit including:
(1) a first inductor; and
(2) a bypass switch coupled in parallel with the first inductor; and
(d) an impedance matching and bias circuit configured to be coupled to a source voltage and directly connected to the node, the impedance matching and bias circuit including at least a second inductor;
wherein in a first high gain mode of operation, the bypass switch is in an open state, thereby coupling the first inductor between the amplified-signal terminal and the node; and
wherein in a first low gain mode of operation, the bypass switch is in a closed state, thereby bypassing the first inductor and coupling the amplified-signal terminal to the node.