US 12,149,050 B2
Low divergence vertical cavity surface emitting lasers, and modules and host devices incorporating the same
Jean-Francois Seurin, Princeton Junction, NJ (US)
Assigned to AMS SENSORS ASIA PTE. LTD., Singapore (SG)
Appl. No. 17/259,426
Filed by ams Sensors Asia Pte. Ltd., Singapore (SG)
PCT Filed Aug. 13, 2019, PCT No. PCT/SG2019/050397
§ 371(c)(1), (2) Date Jan. 11, 2021,
PCT Pub. No. WO2020/036535, PCT Pub. Date Feb. 20, 2020.
Claims priority of provisional application 62/718,049, filed on Aug. 13, 2018.
Prior Publication US 2021/0281049 A1, Sep. 9, 2021
Int. Cl. H01S 5/183 (2006.01); G01S 7/481 (2006.01); G01S 17/08 (2006.01); H01S 5/34 (2006.01); H01S 5/42 (2006.01)
CPC H01S 5/18361 (2013.01) [G01S 7/4815 (2013.01); G01S 17/08 (2013.01); H01S 5/18305 (2013.01); H01S 5/3416 (2013.01); H01S 5/423 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A vertical cavity surface emitting laser (VCSEL) comprising:
a substrate;
an epitaxial VCSEL structure on the substrate, wherein the epitaxial VCSEL structure includes:
a resonant cavity, including a gain region, disposed between a bottom mirror and a partially reflecting middle mirror, the partially reflecting middle mirror being further from the substrate than the bottom mirror; and
an additional epitaxial layer disposed between the partially reflecting middle mirror and a top mirror, the top mirror being further from the substrate than the partially reflecting middle mirror, and the additional epitaxial layer having a thickness in a range of 5 μm-100 μm,
wherein the VCSEL is operable to produce a light beam that is emitted from the VCSEL, the light beam having a full-width half-maximum beam divergence of no more than 10 degrees.