US 12,149,049 B2
Vertical-cavity surface-emitting laser and method for forming the same
Yu-Chun Chen, Taoyuan (TW); Yu-Hsuan Huang, Taoyuan (TW); and Chia-Ta Chang, Taoyuan (TW)
Assigned to WIN SEMICONDUCTORS CORP., Taoyuan (TW)
Filed by WIN SEMICONDUCTORS CORP., Taoyuan (TW)
Filed on Nov. 16, 2021, as Appl. No. 17/527,308.
Claims priority of provisional application 63/132,549, filed on Dec. 31, 2020.
Prior Publication US 2022/0209502 A1, Jun. 30, 2022
Int. Cl. H01S 5/183 (2006.01)
CPC H01S 5/18311 (2013.01) [H01S 5/18377 (2013.01); H01S 5/18386 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A vertical-cavity surface-emitting laser, comprising:
a substrate;
a first mirror disposed on the substrate;
an active layer disposed on the first mirror;
an oxide layer disposed on the active layer;
an aperture disposed on the active layer, wherein the aperture is surrounded by the oxide layer;
a second mirror disposed on the aperture and the oxide layer;
a high-contrast grating disposed on the second mirror, wherein the high-contrast grating comprises a first grating element and a second grating element, and the first grating element and the second grating element are spaced apart from each other with an air gap therebetween; and
a passivation layer disposed on the high-contrast grating, wherein a first thickness of the passivation layer on a top surface of the first grating element is greater than a second thickness of the passivation layer on a first sidewall of the first grating element.