US 12,149,044 B2
Flip-chip optoelectronic device
Yee Loy Lam, Singapore (SG); Hon Yuen Aaron Sim, Singapore (SG); Lay Cheng Choo, Singapore (SG); and Long Cheng Koh, Singapore (SG)
Assigned to DENSELIGHT SEMICONDUCTORS PTE LTD, Singapore (SG)
Filed by DENSELIGHT SEMICONDUCTORS PTE LTD, Singapore (SG)
Filed on Jan. 19, 2022, as Appl. No. 17/648,371.
Claims priority of provisional application 63/139,679, filed on Jan. 20, 2021.
Prior Publication US 2022/0231477 A1, Jul. 21, 2022
Int. Cl. H01S 5/0234 (2021.01); H01S 5/023 (2021.01); H01S 5/0237 (2021.01); H01S 5/024 (2006.01)
CPC H01S 5/0234 (2021.01) [H01S 5/023 (2021.01); H01S 5/0237 (2021.01); H01S 5/02461 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An optoelectronic device, comprising:
a semiconductor die comprising:
a substrate layer;
a laser diode formed on the substrate layer;
a first conducting pad and a second conducting pad, wherein the first conducting and the second conducting pad are formed on the substrate layer;
a first passivation layer formed on the second conducting pad, and between (i) the first conducting pad and the laser diode and (ii) the second conducting pad and the laser diode;
a first cathode pad formed on the first conducting pad;
an anode pad formed above a first region of the first passivation layer, wherein the first region of the first passivation layer is formed on the second conducting pad; and
a second passivation layer formed above the laser diode, and isolates the first cathode pad and the anode pad; and
a submount, wherein the semiconductor die is coupled to the submount in a flip-chip configuration by way of the anode pad and the first cathode pad such that a free space is created directly between the second passivation layer and the submount.