US 12,149,014 B2
Terahertz mixer, method of manufacturing terahertz mixer, and electronic device including terahertz mixer
Yuanjing Li, Beijing (CN); Haifan Hu, Beijing (CN); Ziran Zhao, Beijing (CN); and Xuming Ma, Beijing (CN)
Assigned to NUCTECH COMPANY LIMITED, Beijing (CN)
Appl. No. 17/418,951
Filed by NUCTECH COMPANY LIMITED, Beijing (CN)
PCT Filed Oct. 10, 2019, PCT No. PCT/CN2019/110358
§ 371(c)(1), (2) Date Jun. 28, 2021,
PCT Pub. No. WO2020/134331, PCT Pub. Date Jul. 2, 2020.
Claims priority of application No. 201811642822.4 (CN), filed on Dec. 29, 2018.
Prior Publication US 2022/0109241 A1, Apr. 7, 2022
Int. Cl. H01Q 9/06 (2006.01); H01P 1/213 (2006.01); H01P 11/00 (2006.01)
CPC H01Q 9/065 (2013.01) [H01P 1/2135 (2013.01); H01P 11/007 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A terahertz mixer, comprising:
a cavity for forming a radio frequency input waveguide and a local oscillator input waveguide, and for accommodating a microstrip line; and
the microstrip line formed on at least a part of an inner surface of the cavity by using a semiconductor growth process, wherein the microstrip line extends into a portion of the cavity where the radio frequency input waveguide is located so as to form a microstrip antenna for receiving a radio frequency input signal, and into a portion of the cavity where the local oscillator input waveguide is located so as to form a microstrip antenna for receiving a local oscillator input signal,
wherein the cavity is formed by a silicon substrate or a gallium arsenide substrate, a groove structure is formed on the silicon substrate or the gallium arsenide substrate, a metal layer is formed on an inner surface of the silicon substrate or the gallium arsenide substrate and on a sidewall of the groove structure, and the cavity is formed by bonding of the metal layer.